? semiconductor components industries, llc, 2004 december, 2004 ? rev. 5 1 publication order number: mjd31/d mjd31, mjd31c (npn), mjd32, mjd32c (pnp) mjd31c and mjd32c are preferred devices complementary power transistors dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. features ? pb?free packages are available ? lead formed for surface mount applications in plastic sleeves ? straight lead version in plastic sleeves (a1o suffix) ? lead formed version in 16 mm tape and reel (at4o suffix) ? electrically similar to popular tip31 and tip32 series ? epoxy meets ul 94, v?0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v maximum ratings rating symbol max unit collector?emitter voltage mjd31, mjd32 mjd31c, mjd32c v ceo 40 100 vdc collector?base voltage mjd31, mjd32 mjd31c, mjd32c v cb 40 100 vdc emitter?base voltage v eb 5 vdc collector current ? continuous ? peak i c 3 5 adc base current i b 1 adc total power dissipation @ t c = 25 c derate above 25 c p d 15 0.12 w w/ c total power dissipation @ t a = 25 c derate above 25 c p d 1.56 0.012 w w/ c operating and storage junction temperature range t j , t stg ?65 to + 150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 8.3 c/w thermal resistance, junction?to?ambient* r ja 80 c/w lead temperature for soldering purposes t l 260 c *these ratings are applicable when surface mounted on the minimum pad sizes recommended. silicon power transistors 3 amperes 40 and 100 volts 15 watts preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information dpak?3 case 369d style 1 dpak case 369c style 1 marking diagrams y = year ww = work week xx = 1, 1c, 2, or 2c 1 2 3 4 yww j3xx 1 2 3 4 yww j3xx http://onsemi.com
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 2 ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ? ????????????????????? ? ??????????????????????? characteristic ????? ? ??? ? ????? symbol ??? ? ? ? ??? min ??? ? ? ? ??? max ??? ? ? ? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector?emitter sustaining voltage (note 1) (i c = 30 madc, i b = 0) mjd31, mjd32 mjd31c, mjd32c ????? ? ??? ? ? ??? ? ????? v ceo(sus) ??? ? ? ? ? ? ? ??? 40 100 ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 40 vdc, i b = 0) mjd31, mjd32 (v ce = 60 vdc, i b = 0) mjd31c, mjd32c ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? ? ??? ? ? ? ? ? ? ??? 50 ??? ? ? ? ? ? ? ??? adc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = rated v ceo , v eb = 0) ????? ? ??? ? ????? ices ??? ? ? ? ??? ? ??? ? ? ? ??? 20 ??? ? ? ? ??? adc ??????????????????????? ? ????????????????????? ? ??????????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ? ??? ? ? ? ??? 1 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? dc current gain (i c = 1 adc, v ce = 4 vdc) (i c = 3 adc, v ce = 4 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 25 10 ??? ? ? ? ? ? ? ??? ? 50 ??? ? ? ? ? ? ? ??? ? ??????????????????????? ? ????????????????????? ? ??????????????????????? collector?emitter saturation voltage (i c = 3 adc, i b = 375 madc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ? ??? ? ? ? ??? 1.2 ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? base?emitter on voltage (i c = 3 adc, v ce = 4 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? ? ??? ? ? ? ??? 1.8 ??? ? ? ? ??? vdc ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? dynamic characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? current gain ? bandwidth product (note 2) (i c = 500 madc, v ce = 10 vdc, f test = 1 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 3 ??? ? ? ? ??? ? ??? ? ? ? ??? mhz ??????????????????????? ? ????????????????????? ? ??????????????????????? small?signal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 20 ??? ? ? ? ??? ? ??? ? ? ? ??? ? 1. pulse test: pulse width 300 s, duty cycle 2%. 2. f t = ? h fe ?? f test .
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 3 0.03 i c , collector current (amps) 5 0.07 0.3 3 70 30 300 h fe , dc current gain v ce = 2 v t j = 150 c 100 0.1 0.7 25 c -55 c 50 0.05 0.5 1 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) figure 2. switching time test circuit figure 3. dc current gain 3 0.03 i c , collector current (amps) 0.03 0.05 0.07 0.1 0.2 0.5 0.7 3 i b1 = i b2 i c /i b = 10 t s = t s - 1/8 t f t j = 25 c t, time (s) m 0.3 2 1 0.7 0.5 0.3 t s 0.2 0.1 0.07 0.05 12 figure 4. turn?on time 2 i c , collector current (amps) 0.02 i c /i b = 10 t j = 25 c t, time (s) m 1 0.7 0.5 0.3 0.1 0.07 0.05 0.03 0.003 figure 5. aono voltages i c , collector current (amps) 1 0.8 v, voltage (volts) 1.4 1.2 0.4 0 +11 v 25 s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma reverse all polarities for pnp. 500 7 10 0.03 0.07 0.3 3 0.1 0.7 0.05 0.5 1 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v 0.6 0.2 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 2 v v ce(sat) @ i c /i b = 10 t f @ v cc = 30 v t f @ v cc = 10 v 2.5 0 2 1.5 1 0.5 t a t c figure 6. turn?off time t a (surface mount) t c typical characteristics
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 4 v ce , collector-emitter voltage (volts) 5 i b , base current (ma) 10 20 1.2 0.4 0 50 100 200 500 2 0.8 t j = 25 c 1.6 2 1 i c = 0.3 a 1000 figure 7. collector saturation region 300 v r , reverse voltage (volts) capacitance (pf) c eb 0.1 200 100 0.5 1 10 40 t j = +25 c t, time (ms) 1 0.01 1 k 0.3 0.2 0.07 r(t), transient thermal resistance (normalized) r jc(t) = r(t) r jc r jc = 8.33 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 single pulse 0.01 figure 8. capacitance 0.7 d = 0.5 figure 9. thermal response 1 a 3 a 70 50 30 0.2 0.3 2 3 5 20 30 c cb 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 0.1 0.05 0.01 i c , collector current (amps) 10 1.5 v ce , collector-emitter voltage (volts) 0.01 3 150 1 0.3 0.2 3 0.05 0.03 wire bond limit thermal limit second breakdown limit 5 7 20 70 10 t c = 25 c single pulse t j = 150 c 100 s 1ms dc 2 0.02 0.1 0.5 2 5 figure 10. active region safe operating area 50 30 100 curves apply below rated v ceo 500 s mjd31, mjd32 mjd31c, mjd32c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 10 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 9. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 5 ordering information device package type package shipping 2 mjd31c dpak 369c 75 units / rail mjd31cg dpak (pb?free) 369c 75 units / rail MJD31C1 dpak?3 369d 75 units / rail mjd31crl dpak 369c 1800 tape & reel mjd31crlg dpak (pb?free) 369c 1800 tape & reel mjd31ct4 dpak 369c 2500 tape & reel mjd31ct4g dpak (pb?free) 369c 2500 tape & reel mjd31t4 dpak 369c 2500 tape & reel mjd31t4g dpak (pb?free) 369c 2500 tape & reel mjd32c dpak 369c 75 units / rail mjd32c1 dpak?3 369d 75 units / rail mjd32crl dpak 369c 1800 tape & reel mjd32ct4 dpak 369c 2500 tape & reel mjd32ct4g dpak (pb?free) 369c 2500 tape & reel mjd32rl dpak 369c 1800 tape & reel mjd32rlg dpak (pb?free) 369c 1800 tape & reel mjd32t4 dpak 369c 2500 tape & reel mjd32t4g dpak (pb?free) 369c 2500 tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 6 package dimensions dpak case 369c issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ?t? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. base 2. collector 3. emitter 4. collector
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 7 package dimensions dpak?3 case 369d?01 issue b 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? style 1: pin 1. base 2. collector 3. emitter 4. collector
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mjd31/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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